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| PD - 95568 IRG4PC60UPBF INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. Industry standard TO-247AC package. Lead-Free C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.6V @VGE = 15V, IC = 40A n-channel Benefits Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specified application conditions. Designed for best performance when used with IR Hexfred & IR Fred companion diodes. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 75 40 300 300 20 200 520 210 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ---0.24 ---6 (0.21) Max. 0.24 ---40 ---- Units C/W g (oz) www.irf.com 1 07/15/04 IRG4PC60UPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ---Emitter-to-Collector Breakdown Voltage 17 ---V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---- 0.28 ---- 1.7 VCE(ON) Collector-to-Emitter Saturation Voltage ---- 1.9 ---- 1.6 VGE(th) Gate Threshold Voltage 3.0 ---V GE(th)/TJ Temperature Coeff. of Threshold Voltage ---- -12 gfe Forward Transconductance 44 59 ---- ---ICES Zero Gate Voltage Collector Current ---- ------- ---IGES Gate-to-Emitter Leakage Current ---- ---V(BR)CES V(BR)ECS Max. Units Conditions ---V VGE = 0V, IC = 250A ---V VGE = 0V, IC = 1.0A ---- V/C VGE = 0V, IC = 1.0mA 2.0 IC = 40A VGE = 15V ---IC = 75A See Fig.2, 5 V ---IC = 40A , TJ = 150C 6.0 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE 100V, IC = 40A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 5000 VGE = 0V, VCE = 600V, TJ = 150C 100 n A VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------Typ. 310 41 110 39 42 200 100 0.28 1.1 1.3 36 42 300 160 2.6 13 5860 370 75 Max. Units Conditions 320 IC = 40A 46 nC VCC = 480V See Fig. 8 120 VGE = 15V ------TJ = 25C ns IC = 40A, VCC = 480V VGE = 15V, RG = 5.0 ---Energy losses include "tail" ---mJ See Fig. 10, 11, 13, 14 1.8 ---TJ = 150C, ---IC = 40A, VCC = 480V ns ---VGE = 15V, RG = 5.0 ---Energy losses include "tail" ---mJ See Fig. 13, 14 ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = TBD H, RG = 5.0W. (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC60UPBF 80 Square wave: 60% of rated voltage Triangular wave: 60 Load Current ( A ) Ideal diodes Clamp voltage: 80% of rated 40 20 For both: Duty cycle : 50% Tj = 125C Tsink = 90C Gate drive as specified Power Dissipation = 73W 0.1 1 10 100 0 f , Frequency ( kHz ) (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 1 - Typical Load Current vs. Frequency 1000 IC, Collector t-to-Emitter Current (A) 1000 IC, Collector-to-Emitter Current (A) 100 T J = 150C 100 T J = 150C 10 T J = 25C 10 1 T J = 25C VGE = 15V 20s PULSE WIDTH VCC = 10V 5s PULSE WIDTH 1 4 5 6 7 8 9 10 11 0.1 0.0 1.0 2.0 3.0 4.0 5.0 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC60UPBF 80 3.0 VCE , Collector-to Emitter Voltage (V) V GE = 15V Maximum DC Collector Current (A) 70 60 50 40 30 20 10 0 25 50 75 100 125 150 VGE = 15V 80s PULSE WIDTH IC = 80A 2.0 IC = 40A IC = 20A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C, Case Temperature (C) T J , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 ) thJC D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T J = P DM t1/ t 2 x Z thJC 0.1 +TC 1 Thermal Response (Z 0.001 0.00001 0.0001 0.001 0.01 t1, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC60UPBF 10000 20 8000 Cies V GE = 0V, f = 1MHz C ies = C ge + C gc , C ce SHORTED C res = C gc C oes = C ce + C gc Vcc = 480V V CC = 400V Ic = 40V I C = 40A 16 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 6000 12 Coes 4000 8 Cres 2000 4 0 1 10 100 0 0 100 200 300 400 VCE , Collector-to-Emitter Voltage (V) QG, Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.00 VCC = 480V VGE = 15V TJ = 25C I C = 40A 100 RG = 5.0 VGE = 15V Total Switching Losses (mJ) 4.00 Total Switching Losses (mJ) VCC = 480V 10 IC = 80A 3.00 IC = 40A 1 IC = 20A 2.00 1.00 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG, Gate Resistance () T J, Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC60UPBF 8.0 1000 6.0 5.0 4.0 3.0 2.0 1.0 0.0 20 VCC = 480V IC, Collector-to-Emitter Current (A) 7.0 Total Switching Losses (mJ) RG = 5.0 TJ = 150C VGE = 15V VGE = 20V T J = 125 100 SAFE OPERATING AREA 10 1 30 40 50 60 70 80 0.1 1 10 100 1000 IC, Collector Current (A) VDS, Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC60UPBF L 50V 1000V VC * D.U.T. RL = 0 - 480V 480V 4 X IC@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A 1000V d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4PC60UPBF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INT ERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE IRFPE30 56 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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